GRL DNT2-R1N-315A/DC 315A DC1000V aR Semiconductor Fuse
● In StockGRL DNT2-R1N-315A/DC is rated 315A at DC1000V; protection class/type: aR.

GRL DNT2-R1N-315A/DC is rated 315A at DC1000V; protection class/type: aR.
Submit directly from this product page. We will reply with availability, lead time and pricing.
GRL DNT2-R1N-315A/DC 315A DC1000V aR Semiconductor Fuse
Breaking capacity: 50kA; Reference standard: GB/T 13539.4|IEC 60269-4; Certification marks: CCC · CE · TUV; Format / size: DNT2; Temperature range: −5°C to +40°C.
Application: Semiconductor, Industrial.
Confirm the final current, voltage, breaking-capacity and installation requirements against the supplied GRL catalogue before design-in.
GRL Semiconductor Fuse DNT2-R1N-315A/DC is rated 315A, DC1000V, DNT2. Breaking capacity 50kA, operating temperature −5°C to +40°C, certifications CCC · CE · TUV. Listed applications: Industrial, Semiconductor. Standards: GB/T 13539.4, IEC 60269-4. GRL DNT2-R1N-315A/DC is rated 315A at DC1000V; protection class/type: aR.
DNT2-R1N-315A/DC is rated 315A at DC1000V.
DNT2-R1N-315A/DC has a breaking capacity of 50kA. Confirm this covers the available fault current at the installation point.
DNT2-R1N-315A/DC uses DNT2 package size.
DNT2-R1N-315A/DC is listed under GB/T 13539.4, IEC 60269-4 / CCC · CE · TUV.
DNT2-R1N-315A/DC is listed for Industrial, Semiconductor applications. Verify suitability for your circuit before ordering.
DNT2-R1N-315A/DC: typical lead time 4–8 weeks, minimum order 100 pcs. Submit a quote request for a firm quotation.