GRL DNT2-O1L-350A/AC 350A AC1000V aR Semiconductor Fuse
● In StockGRL DNT2-O1L-350A/AC combines a 350A rating with AC1000V system voltage and 100kA breaking capacity.

GRL DNT2-O1L-350A/AC combines a 350A rating with AC1000V system voltage and 100kA breaking capacity.
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GRL DNT2-O1L-350A/AC 350A AC1000V aR Semiconductor Fuse
Breaking capacity: 100kA; Reference standard: GB/T 13539.4|IEC 60269-4; Certification marks: CCC · CE · TUV; Format / size: DNT2; Temperature range: −5°C to +40°C.
Application: Semiconductor, Industrial.
Confirm the final current, voltage, breaking-capacity and installation requirements against the supplied GRL catalogue before design-in.
GRL Semiconductor Fuse DNT2-O1L-350A/AC is rated 350A, AC1000V, DNT2. Breaking capacity 100kA, operating temperature −5°C to +40°C, certifications CCC · CE · TUV. Listed applications: Industrial, Semiconductor. Standards: GB/T 13539.4, IEC 60269-4. GRL DNT2-O1L-350A/AC combines a 350A rating with AC1000V system voltage and 100kA breaking capacity.
DNT2-O1L-350A/AC is rated 350A at AC1000V.
DNT2-O1L-350A/AC has a breaking capacity of 100kA. Confirm this covers the available fault current at the installation point.
DNT2-O1L-350A/AC uses DNT2 package size.
DNT2-O1L-350A/AC is listed under GB/T 13539.4, IEC 60269-4 / CCC · CE · TUV.
DNT2-O1L-350A/AC is listed for Industrial, Semiconductor applications. Verify suitability for your circuit before ordering.
DNT2-O1L-350A/AC: typical lead time 4–8 weeks, minimum order 100 pcs. Submit a quote request for a firm quotation.